 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PHOTOMULTIPLIER TUBES PRELIMINARY DATA SEPT. 2003 R8486, R8487 For Vacuum Ultraviolet Light Detection Cs-Te (R8486), Cs-I (R8487) Photocathode, MgF2 Window, 28 mm (1-1/8 Inch) Diameter, 9-stage, Side-on Type FEATURES G Sensitivity in the Vacuum Ultraviolet Region R8486.......................................115 to 320 nm R8487.......................................115 to 195 nm G High Quantum Efficiency (at 121.6 nm) R8486........................................22.5 % (Typ.) R8487........................................26.0 % (Typ.) G High Anode Sensitivity R8486 (at 254 nm).........5.2 x 105 A/W (Typ.) R8487 (at 121.6 nm)......1.0 x 105 A/W (Typ.) APPLICATIONS G Emission Spectroscopy, etc. PMSF0093 SPECIFICATIONS GENERAL Parameter R8486 R8487 Spectral Response 115 to 320 115 to 195 Wavelength 200 130 of Maximum Response Photocathode Material Cs-Te Cs-I Window Material MgF2 Minimum Effective Area 8 x 12 Circular-cage Structure Dynode 9 Number of Stage Sb-Cs Material Direct Approx. 4 Anode to Dynode No.9 Interelectrode Anode to Approx. 6 Capacitances All Other Electrodes Base 11-pin base JEDEC No. B11-88 Weight 45 Suitable Socket E678-11A (sold separately) Operating Ambient Temperature -30 to +50 Storage Temperature -30 to +50 Unit nm nm -- -- mm -- -- -- pF pF -- g -- C C Figure 1: Typical Spectral Response TPMSB0199EA 100 PHOTOCATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) CATHODE RADIANT SENSITIVITY 10 1 QUANTUM EFFICIENCY R8486 R8487 0.1 0.01 100 200 300 WAVELENGTH (nm) Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2003 Hamamatsu Photonics K.K. PHOTOMULTIPLIER TUBES R8486, R8487 MAXIMUM RATINGS (Absolute Maximum Values) Parameter Supply Voltage Between Anode and Cathode Between Anode and Last Dynode Between Successive Dynodes Between First Dynode and Cathode Average Anode Current A Rating 1250 250 250 250 0.1 Unit V V V V V CHARACTERISTICS (at 25 C) Parameter Cathode Sensitivity Quantum Efficiency at 121 nm at 254 nm Anode Sensitivity B Radiant at 121 nm at 254 nm Gain Anode Dark Current (After 30 minute storage in darkness) C ENI (Equivalent Noise Input) D at 121 nm at 254 nm Time Response Anode Pulse Rise Time E Electron Transit Time F Transit Time Spread G 2.2 22 1.2 2.2 22 1.2 ns ns ns -- 5.2 x 105 1.0 x 107 1.0 -- 1.09 x 10-16 1.0 x 105 -- 3.9 x 106 A/W A/W -- nA W W 22.5 25.0 26.0 -- % % R8486 R8487 Unit 0.1 1.12 x 10-16 -- NOTES A: Averaged over any interval of 30 seconds maximum. B: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. Table 1: Voltage Distribution Ratio Electrode K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 P 1 1 1 1 1 E: The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. F: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. G: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. Distribution 1 1 1 1 1 Ratio Supply Voltage=1000 V K: Cathode Dy: Dynode P: Anode C: Measured with the same supply voltage and voltage distribution ratio as Note E after removal of light. D: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = where q= ldb = g= f = S= 2q*ldb*g*f S Electronic charge (1.60 x 10-19 coulomb). Anode dark current in amperes after 30 minutes storage in darkness. Gain. Bandwidth of the system in hertz. Anode radiant sensitivity in amperes per watt at the wavelength of interest. Figure 2: Typical Gain and Anode Radiant Sensitivity 108 TPMSB0200EA Figure 3: Typical Time Response TPMSB0004EB 108 R8486 TYPICAL GAIN 100 80 60 ANODE RADIANT SENSITIVITY (A/W) 107 R8487 TYPICAL GAIN 107 40 TRAN SIT T IME 106 106 20 105 R8486 TYPICAL ANODE SENSITIVITY (at 254 nm) R8487 TYPICAL ANODE SENSITIVITY (at 121.6 nm) TIME (ns) GAIN 105 10 8 6 104 104 4 RISE TIME 103 103 2 102 500 700 1000 102 1500 1 300 500 700 1000 1500 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) Figure 4: Dimensional Outline and Basing Diagram (Unit: mm) Figure 5: Socket E678-11A (Sold Separately) (Unit: mm) 49 38 28.5 1.5 8 MIN. MgF2 WINDOW DY6 6 29 5 DY5 14 MIN. DY4 4 80 MAX. DY3 3 94 MAX. DY2 2 5 7 DY7 8 DY8 9 DY9 10 P 18 4 3.5 FACE PLATE 33 20 MAX. 20 MAX. 49.0 2.5 TACCA0064EA PHOTOCATHODE 1 11 K DY1 DIRECTION OF LIGHT 32.2 0.5 11 PIN BASE JEDEC No. B11-88 TPMSA0042EB NOTE: There is a 2 mm diameter hole to exhaust inner air on the plastic base. PHOTOMULTIPLIER TUBES R8486, R8487 Warning--Personal Safety Hazards Electrical Shock--Operating voltages applies to this device present a shock hazard. WEB SITE http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it TPMS1070E02 OCT. 2003 IP |
Price & Availability of R848603
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |